EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.

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The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. An opaque coating paint, tape, label, etc. Search the history of over billion web pages on the Internet. No pins should be left open. Extended expo- sure to room level fluorescent lighting will also cause erasure.

2716 – 2716 16K EPROM Datasheet

The distance from lamp to unit should be maintained at 1 inch. To prevent damage the device it must not be inserted into a board with power applied. After the address and data signals are stable the program pin is pulsed from VI L to VIH with a pulse width between 45 ms and 55 ms. The MME to be erased should be placed 1 inch away from the lamp and no filters should be used.


EPROM Technical Data

The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes daatasheet by a factor of 4. Capacitance Is guaranteed by periodic testing. In- complete erasure will cause symptoms that can be misleading.

The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time.

When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring.

All bits will be at a “1” level output high in this initial state and after any full erasure. The MME is packaged in a pin dual-in-line package with transparent lid.

IC Datasheet: 2716 EPROM – 1

Programmers, components, datasheet system designs have been erroneously suspected when incom- plete erasure was the basic problem. A new pattern can then be written into the device by following the programming procedure.

Datqsheet pulses are not needed but will not cause device damage. Transition times S 20 ns unless noted otherwise. All similar inputs of the MME may be par- alleled.

It is recommended that the MME be kept out of direct sunlight. These are shown in Table I. Full text of ” IC Datasheet: Table II shows the 3 programming modes. This exposure discharges the floating gate to its initial state through induced photo current.


Except for “Operating Temperature Range” they are not datasheft to imply that the devices should be operated at these limits. MMES may be programmed in parallel with the same data in this mode. Any individual address, a sequence of addresses, or addresses chosen at random may be programmed.

All input voltage levels, including the program pulse on chip-enable are TTL compatible.

Full text of “IC Datasheet: EPROM – 1”

This is done 8 bits a byte at a time. An erasure system should be calibrated periodically. Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse.

Datahseet sunlight any intense light can cause temporary functional fail- ure due to generation of photo current.

Lamps lose intensity as they age.