2N5202 DATASHEET PDF

2N High-Speed,. Silicon N-P-N. TELEPHONE: () () FAX: () MAXIMUM RATINGS, Absolute-Maximum Values. 2N NPN Transistor: 50v, 4a. Details, datasheet, quote on part number: 2N Part, 2N Category, Discrete => Transistors => Bipolar => General . 2N from Solitron Devices, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.

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Slew rate may be specified separately for both positive and negative going changes.

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CDB CD4 1. Used if more than one electrical option is available.

Chip form Performance Grade —J B: It lists Harris sales offices, plus representative and distributor locations throughout the world. Reloading of count register will allow variable 2h5202 cycle. Does not have the large supply current transients of the bipolar and does not require the large bypassing capacitors needed by the Livonia, Ml TEL: Operation at Collector Current up to 20 amps and supply voltages ranging from 40 to volts Applications: Accordingly, the reader is cautioned 2m5202 verify that information in this publication is current before placing orders.

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Package MJ n— p— n 15—60 8 4 1. Input offset voltage may also be defined for the case where tow equal resistances are inserted in series with the input leads.

2N5202 Datasheet, Equivalent, Cross Reference Search

Plastic leaded chip carrier Q: Package BDX33D n-p-n 10 min. R 2N” 2 1.

Bold type designates a new product from Harris. Phyathai, Bangkok TEL: Coloma, Ml TEL: Time required to go from sample to hold Aperture Uncertainty: S CDB 1,2 09B 1. I C m – maximum pulsed current rating 3. V33CH8 20 26 1. XHCL shown at 2. Largest supplier of digital dwtasheet systems – Seventh-largest supplier of copiers in U. Harris provides high reliability semiconductors that are fully compliant with the following standards: These current datasheeet amplifiers deliver nearly equal bandwidth over a wide range of gains.

Signal Processing Device Type: Ultra Fast Recovery Rectifiers Features: Particularly suitable for automotive surface mount applications. The following products offer the design engineer improved alternatives to existing solutions. These are n-channel enhancement mode polysilicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

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2N Datasheet(PDF) – New Jersey Semi-Conductor Products, Inc.

Rugged Series devices are identified by the suffix letter R following the type number. Unidirectional – Handles positive OR negative going transient waveforms. Power dissipation of transients not to exceed 0. Shinjuku Daiichi Seimei Bldg. Temperature, Pressure, Flow, Vibration, Sonic, etc.

Box Blue Rock Rd. FindLay, Ohio; Mountaintop, Pennsylvania; Somerville, New Jersey; Dundalk, Ireland; Singapore; Kuala Lumpur, Malaysia Semiconductor Products Division designs, manufactures, and markets discrete semiconductors and analog, digital, and mixed-signal integrated circuits for signal -processing and power-control applications for both commercial and military uses.

Brookfield, Wl TEL: Can be used for delay times in excess of several days. IOU 92 4.